Method of neutralizing local defects in charge couple device structures
A process and structure are disclosed whereby dopants are used to surround crystalline defects in a semiconductor crystal thereby creating a PN junction which isolates the defect site from the remaining semiconductor substrate and preventing charge flow through the defect into the potential well of...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A process and structure are disclosed whereby dopants are used to surround crystalline defects in a semiconductor crystal thereby creating a PN junction which isolates the defect site from the remaining semiconductor substrate and preventing charge flow through the defect into the potential well of a charge coupled device structure. |
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