III(A)-(VB) Type luminescent diode

Due to its dopant structure, the radiant band of a III(A) - V(B) type luminescent diode, emitting light radiation in the plane of the PN-junction, possesses differences in delay time of

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Bibliographische Detailangaben
Hauptverfasser:	KUGLER, FLORIAN, ZEHE, ALFRED, JACOBS, KLAUS, BUTTER, EHRENFRIED, DOSS, RAINER, UNGER, KONRAD, BRIGITTE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Due to its dopant structure, the radiant band of a III(A) - V(B) type luminescent diode, emitting light radiation in the plane of the PN-junction, possesses differences in delay time of