Process for the preparation of diepoxides

Diepoxides of the general formula: wherein n has an average value not exceeding 0.03 and R is the bisphenyl radical of bisphenol-A are recovered from an epoxy resin of the same general formula with n varying from 0.07 to 0.30, by removing the low-boiling substance from the epoxy resin at 0.1-1 mm Hg...

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Bibliographische Detailangaben
Hauptverfasser:	CRESPOLINI, GIANCARLO, GRAZZINI, GIULIO, VARGIU, SILVIO
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOSITIONS BASED THEREON CORRECTING FLUIDS DYES FILLING PASTES GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HETEROCYCLIC COMPOUNDS INKS MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC CHEMISTRY ORGANIC MACROMOLECULAR COMPOUNDS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING POLISHES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	Diepoxides of the general formula: wherein n has an average value not exceeding 0.03 and R is the bisphenyl radical of bisphenol-A are recovered from an epoxy resin of the same general formula with n varying from 0.07 to 0.30, by removing the low-boiling substance from the epoxy resin at 0.1-1 mm Hg and 165 DEG -200 DEG C and distilling off said diepoxide from the thus treated epoxy resin at 0.1-0.005 mm Hg and a temperature not exceeding 240 DEG C. The low viscosity, narrow molecular weight distribution and excellent purity of these diepoxides allow their use in critical application fields.