Semiconductor indicating device and method for production of same

A semiconductor display of digital data device using a semiconductor crystal wherein the p-region has a thickness of 0.1-0.3 mu m, the concentration of neutral atoms in the n-region is from 1.5x1018 to 5x1018 cm3 and the thickness of the compensated region disposed between said two regions containin...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	LOMAKINA, GALINA ALEXANDROVNA, RYZHIKOV, IGOR VENIAMINOVICH, IVANOVA, ELEONORA GRIGORIEVNA, KMITA, TATYANA GEORGIEVNA, NOVIKOV, VLADIMIR PAVLOVICH, PAVLICHENKO, VADIM IVANOVICH, KHOLUYANOV, GEORGY FEDOROVICH, VODAKOV, JURY ALEXANDROVICH, BABENKO, VLADIMIR ALEXANDROVICH, VIOLIN, EDUARD EFIMOVICH, KRUGLOV, IGOR IVANOVICH, BOEVA, GALINA GEORGIEVNA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A semiconductor display of digital data device using a semiconductor crystal wherein the p-region has a thickness of 0.1-0.3 mu m, the concentration of neutral atoms in the n-region is from 1.5x1018 to 5x1018 cm3 and the thickness of the compensated region disposed between said two regions containing a luminescence activator, has a thickness of 0.5-1.2 mu m.