Ion implantation apparatus utilizing multiple aperture source plate and single aperture accel-decel system

In an ion implantation apparatus, means for forming multiple, separate parallel ion beams, each having a predetermined spot diameter, and means for focusing each of said ion beams upon a predetermined chip area of a target wafer whereby multiple chip areas upon the wafer can be simultaneously implan...

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Bibliographische Detailangaben
Hauptverfasser:	SCHIEN, ALBERT, KO, WEN CHUANG, WINNARD, JAMES ROBERT
Format:	Patent
Sprache:	eng
Schlagworte:	APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY GAMMA RAY OR X-RAY MICROSCOPES IRRADIATION DEVICES MEASURING NUCLEAR ENGINEERING NUCLEAR PHYSICS PHYSICS SCANNING-PROBE TECHNIQUES OR APPARATUS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR TESTING
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Beschreibung
Zusammenfassung:	In an ion implantation apparatus, means for forming multiple, separate parallel ion beams, each having a predetermined spot diameter, and means for focusing each of said ion beams upon a predetermined chip area of a target wafer whereby multiple chip areas upon the wafer can be simultaneously implanted with prescribed ion dosages.