Method for producing single crystal films

Method for producing single crystal films

The reaction zone for the deposition of a metal oxide film on a crystal substrate inside a reaction chamber is shifted during a chemical vapor deposition process by the systematic control of the process parameters of the system.

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Hauptverfasser: HAMILTON, THOMAS N, MEE, JACK E, HEINZ, DAVID M, ARCHER, JOHN L
Format: Patent
Sprache:eng
Schlagworte:
CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
INORGANIC CHEMISTRY
METALLURGY
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creator HAMILTON
THOMAS N
MEE
JACK E
HEINZ
DAVID M
ARCHER
JOHN L
description The reaction zone for the deposition of a metal oxide film on a crystal substrate inside a reaction chamber is shifted during a chemical vapor deposition process by the systematic control of the process parameters of the system.
format Patent
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subjects CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
INORGANIC CHEMISTRY
METALLURGY
title Method for producing single crystal films
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