Method for producing single crystal films
The reaction zone for the deposition of a metal oxide film on a crystal substrate inside a reaction chamber is shifted during a chemical vapor deposition process by the systematic control of the process parameters of the system.
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The reaction zone for the deposition of a metal oxide film on a crystal substrate inside a reaction chamber is shifted during a chemical vapor deposition process by the systematic control of the process parameters of the system. |
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