Method for producing single crystal films

The reaction zone for the deposition of a metal oxide film on a crystal substrate inside a reaction chamber is shifted during a chemical vapor deposition process by the systematic control of the process parameters of the system.

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Bibliographische Detailangaben
Hauptverfasser: HAMILTON, THOMAS N, MEE, JACK E, HEINZ, DAVID M, ARCHER, JOHN L
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:The reaction zone for the deposition of a metal oxide film on a crystal substrate inside a reaction chamber is shifted during a chemical vapor deposition process by the systematic control of the process parameters of the system.