Micro-structure field emission electron source

A new and improved microminiature field emission electron source and method of manufacturing is described using a single crystal semiconductor substrate. The substrate is processed in accordance with known integrated microelectronic circuit techniques to form a plurality of integral, single crystal semiconductor raised field emitter tips at desired field emission cathode sites on the surface of the substrate in a manner such that the field emitter tips are integral with the single crystal semiconductor substrate. An insulating layer and overlying conductive layer may be formed in the order named over the semiconductor substrate and provided with openings at the field emission site locations to form micro-anode structures for each field emitter tip. By initially appropriately doping the semiconductor substrate to provide opposite conductivity-type regions at each of the field emission sites, and appropriately forming the conductive layer, electrical isolation between the several field emission sites can be obtained.