Methods for making MOS read-only memories

An MOS read-only memory comprises a matrix array of IGFETs which are initially made all to be operable. The array is encoded by etching apertures in the gate electrodes of selected devices and ion implanting impurities through the apertures to render the selected devices inoperative, thus defining d...

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Bibliographische Detailangaben
Hauptverfasser: CHENEY, GLEN TRENTON, EDWARDS, JOHN RICHARD
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An MOS read-only memory comprises a matrix array of IGFETs which are initially made all to be operable. The array is encoded by etching apertures in the gate electrodes of selected devices and ion implanting impurities through the apertures to render the selected devices inoperative, thus defining digital "O"s.