Method of obtaining a fused, doped contact between an electrode metal and a semi-conductor
A multilayered structure containing an electrode metal, doping agents and titanium is made on the surface of a semi-conductor. In order to form such a structure the surface of the semi-conductor is directly coated with a layer of titanium on which an electrode metal layer is deposited. After that th...
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| creator | SHVARTSMAN VADIM LVOVICH AKIMOV JURY STEPANOVICH GOFMAN BORIS IZRAILEVICH ERMOSHIN VYACHESLAV DMITRIEVICH GARSHENIN VLADIMIR VASILIEVICH PREOBRAZHENTSEV KONSTANTIN ANDREEVICH SAMOKHVALOV MARK MARKOVICH KOROVIN STANISLAV KONSTANINOVICH GALAEV AULI ALEXANDROVICH NAUMOV VLADIMIR VASILIEVICH FRONK STANISLAV VLADISLAVOVICH GORELIK SEMEN SAMUILOVICH KRUGLOV IGOR IVANOVICH STAKHOV OLEG FEDOROVICH |
| description | A multilayered structure containing an electrode metal, doping agents and titanium is made on the surface of a semi-conductor. In order to form such a structure the surface of the semi-conductor is directly coated with a layer of titanium on which an electrode metal layer is deposited. After that the layers of the doping agents and electrode metal are deposited in an alternating order. The structure thus obtained is heated to a temperature of the eutectic of "electrode metal - semi-conductor." On the surface of the semi-conductor a melt is formed to contain the electrode metal and the doping agents. Since the oxides of the semi-conductor are reduced, a regular front of fusion of the electrode metal and diffusion of the doping agents into the semi-conductor is thus provided. |
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In order to form such a structure the surface of the semi-conductor is directly coated with a layer of titanium on which an electrode metal layer is deposited. After that the layers of the doping agents and electrode metal are deposited in an alternating order. The structure thus obtained is heated to a temperature of the eutectic of "electrode metal - semi-conductor." On the surface of the semi-conductor a melt is formed to contain the electrode metal and the doping agents. Since the oxides of the semi-conductor are reduced, a regular front of fusion of the electrode metal and diffusion of the doping agents into the semi-conductor is thus provided.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Method of obtaining a fused, doped contact between an electrode metal and a semi-conductor |
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