Method of obtaining a fused, doped contact between an electrode metal and a semi-conductor

Method of obtaining a fused, doped contact between an electrode metal and a semi-conductor

A multilayered structure containing an electrode metal, doping agents and titanium is made on the surface of a semi-conductor. In order to form such a structure the surface of the semi-conductor is directly coated with a layer of titanium on which an electrode metal layer is deposited. After that th...

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Bibliographische Detailangaben
Hauptverfasser: SHVARTSMAN, VADIM LVOVICH, AKIMOV, JURY STEPANOVICH, GOFMAN, BORIS IZRAILEVICH, ERMOSHIN, VYACHESLAV DMITRIEVICH, GARSHENIN, VLADIMIR VASILIEVICH, PREOBRAZHENTSEV, KONSTANTIN ANDREEVICH, SAMOKHVALOV, MARK MARKOVICH, KOROVIN, STANISLAV KONSTANINOVICH, GALAEV, AULI ALEXANDROVICH, NAUMOV, FRONK, STANISLAV VLADISLAVOVICH, GORELIK, SEMEN SAMUILOVICH, KRUGLOV, IGOR IVANOVICH, STAKHOV, OLEG FEDOROVICH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A multilayered structure containing an electrode metal, doping agents and titanium is made on the surface of a semi-conductor. In order to form such a structure the surface of the semi-conductor is directly coated with a layer of titanium on which an electrode metal layer is deposited. After that the layers of the doping agents and electrode metal are deposited in an alternating order. The structure thus obtained is heated to a temperature of the eutectic of "electrode metal - semi-conductor." On the surface of the semi-conductor a melt is formed to contain the electrode metal and the doping agents. Since the oxides of the semi-conductor are reduced, a regular front of fusion of the electrode metal and diffusion of the doping agents into the semi-conductor is thus provided.