SEMICONDUCTOR DEVICE

The materials or dimensions of a gate insulating film or a gate electrode of an insulated gate field effect type semiconductor device are made different, so as to provide a gate of two or more gate parts having different structures.

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Bibliographische Detailangaben
Hauptverfasser:	KOZAWA T,JA, MASUDA H,JA, NAGATA M,JA, MASUHARA T,JA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The materials or dimensions of a gate insulating film or a gate electrode of an insulated gate field effect type semiconductor device are made different, so as to provide a gate of two or more gate parts having different structures.