METHOD FOR PRODUCING A SEMICONDUCTOR STRAIN SENSITIVE ELEMENT OF AN ELECTROMECHANICAL SEMICONDUCTOR TRANSDUCER

A method for producing a semiconductor strain sensitive element of an electromechanical semiconductor transducer, comprising the steps of forming a semiconductor crystal layer integrally and insulately on a base plate, removing predetermined portions of the semiconductor crystal layer, and providing...

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Bibliographische Detailangaben
Hauptverfasser:	SUGIYAMA S,JA, IGARASHI I,JA, NAKAMURA H,JA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A method for producing a semiconductor strain sensitive element of an electromechanical semiconductor transducer, comprising the steps of forming a semiconductor crystal layer integrally and insulately on a base plate, removing predetermined portions of the semiconductor crystal layer, and providing first and second narrow grooves at the predetermined portions, thereby forming at least two elongated strip parts and a plurality of wide parts on the base plate, and forming lead mounting electrodes at predetermined portions of a plurality of the wide parts.