METHOD AND MEANS FOR RESETTING FILAMENT-FORMING MEMORY SEMICONDUCTOR DEVICE

A method of resetting a filament-type memory device including spaced electrodes between which extend a body of generally amorphous substantially non-conductive memory semiconductor material which, when a set voltage pulse in excess of a given threshold voltage value and duration is applied to said electrodes, has formed therein a crystalline low resistance filamentous path resettable into a generally amorphous condition by application of one or more reset voltage pulses. The resetting method comprises first applying to the electrodes one or more voltage pulses which produce a reset current pulse or pulses which substantially completely convert the crystalline filamentous path to a condition where the memory device has its maximum resistance and threshold voltage value, and then applying to said electrodes reset voltage pulses each in excess of the maximum threshold voltage value of the memory device which voltage pulses cause additional reset current pulses to flow through the high resistance filamentous path to homogenize the same and prevent crystallization from developing therein due to high ambient temperature storage of the memory device.