SPUTTERING APPARATUS FOR FORMING OHMIC CONTACTS FOR SEMICONDUCTOR DEVICES

Disclosed are methods for depositing multilayer ohmic contacts upon a substrate of semiconductor material disposed within a low pressure chamber; such including for example the particular features of upward sputtering of the various metal films, simultaneous sputtering of platinum with gold utilizin...

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Bibliographische Detailangaben
Hauptverfasser:	CUNNINGHAM J,US, ORR C,US
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Disclosed are methods for depositing multilayer ohmic contacts upon a substrate of semiconductor material disposed within a low pressure chamber; such including for example the particular features of upward sputtering of the various metal films, simultaneous sputtering of platinum with gold utilizing a sputtering cathode composed of platinum and gold, and adding hydrogen into an inert sputtering atmosphere to eliminate undesirable formation of oxides. This invention provides improved adhesion of the sputtered metal films to the semiconductor surface and the silicon oxide, and provides the formation of the metal film which is substantially free of pin holes and which has substantially uniform resistivity.