SEMICONDUCTOR PRESSURE TRANSDUCER EMPLOYING NOVEL TEMPERATURE COMPENSATION MEANS

A semiconductor pressure transducer having a cavity with one thin wall diaphragm on which a piezoresistive bridge is formed of four resistors diffused into the thin wall semiconductor diaphragm and coupled together as a Wheatstone bridge, a voltage regulator including a zener diode coupled to the br...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	SOLOMON J,US, ZIAS A,US
Format:	Patent
Sprache:	eng
Schlagworte:	MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE PHYSICS TESTING
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor pressure transducer having a cavity with one thin wall diaphragm on which a piezoresistive bridge is formed of four resistors diffused into the thin wall semiconductor diaphragm and coupled together as a Wheatstone bridge, a voltage regulator including a zener diode coupled to the bridge, and a pair of nVBE circuits coupled to the bridge and the regulator circuit for temperature compensation of the bridge and regulators over the operating temperature range, each of said nVBE circuits comprising a transistor and two associated resistors connected so as to provide an irrational number of VBE voltage drops for temperature compensation.