METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT ISOLATED THROUGH DIELECTRIC MATERIAL

A semiconductor integrated circuit includes a plurality of semiconductor elements formed on one side of a substrate. The semiconductor element is surrounded by a dish-like outer dielectric layer so as to be insulated from the substrate, and includes therein a bottomless inner dielectric layer adjace...

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Bibliographische Detailangaben
Hauptverfasser:	INABA E,JA, NIWA K,JA, SUMITOMO Y,JA, TSUTSUMI H,JA, SAWAZAKI H,JA, SAKAI K,JA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	A semiconductor integrated circuit includes a plurality of semiconductor elements formed on one side of a substrate. The semiconductor element is surrounded by a dish-like outer dielectric layer so as to be insulated from the substrate, and includes therein a bottomless inner dielectric layer adjacent to the outer dielectric layer. A PN junction is formed in the region enclosed by the inner layer with the peripheral edge located thereat.