INTEGRATED CIRCUIT AND METHOD OF FABRICATION

An insulated gate field effect transistor inverter and method of fabrication is disclosed. The invention comprises two field effect transistors integrated on a semiconductor substrate. The configuration has a common source and is thus compatible with integrated circuit fabrication processes. The cha...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CUNNINGHAM J,US, WAKEFIELD R,US
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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