INTEGRATED CIRCUIT AND METHOD OF FABRICATION

An insulated gate field effect transistor inverter and method of fabrication is disclosed. The invention comprises two field effect transistors integrated on a semiconductor substrate. The configuration has a common source and is thus compatible with integrated circuit fabrication processes. The cha...

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Bibliographische Detailangaben
Hauptverfasser:	CUNNINGHAM J,US, WAKEFIELD R,US
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	An insulated gate field effect transistor inverter and method of fabrication is disclosed. The invention comprises two field effect transistors integrated on a semiconductor substrate. The configuration has a common source and is thus compatible with integrated circuit fabrication processes. The channel length of one of the two field effect transistors is made extremely small utilizing the method of the invention, enabling significant reduction in size of the inverter. In accordance with this method the channel length is determined by the distance between two accurately controlled diffusions, rather than conventional photolithographic techniques.