RAPID RECOVERY CIRCUIT FOR CAPACITIVELY LOADED BIT LINES
There is disclosed a circuit for achieving rapid recovery of the capacitively loaded bit lines of a semiconductor memory. Transistors are provided for driving the lines following a write cycle. The active driving of the bit lines forces them to the same potential so that a read cycle may begin very...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | There is disclosed a circuit for achieving rapid recovery of the capacitively loaded bit lines of a semiconductor memory. Transistors are provided for driving the lines following a write cycle. The active driving of the bit lines forces them to the same potential so that a read cycle may begin very soon after the termination of a write cycle. |
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