SCHOTTKY BARRIER PRESSURE SENSITIVE SEMICONDUCTOR DEVICE WITH AIR SPACE AROUND PERIPHERY OF METAL-SEMICONDUCTOR JUNCTION

SCHOTTKY BARRIER PRESSURE SENSITIVE SEMICONDUCTOR DEVICE WITH AIR SPACE AROUND PERIPHERY OF METAL-SEMICONDUCTOR JUNCTION

Disclosed is a pressure-sensitive transistor whose emitter or collector junction is formed by use of a Schottky barrier junction and wherein the current through the transistor changes in accordance with the applied pressure when pressure is applied to said junction by pressure applying means. Such a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HASEGAWA H,JA, IIZUKA M,JA, FUJIWARA S,JA, SAWAKI T,JA, KANO G,JA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Disclosed is a pressure-sensitive transistor whose emitter or collector junction is formed by use of a Schottky barrier junction and wherein the current through the transistor changes in accordance with the applied pressure when pressure is applied to said junction by pressure applying means. Such a transistor is advantageous in that a high pressure-to-current conversion factor is obtained, little noise is generated at the junction, and the reverse leakage current appearing at the junction is extremely small.