READ ONLY MEMORY UTILIZING FLOATING GATE TRANSISTORS AND METHOD OF PROGRAMMING
A read only memory cell comprising a floating gate field effect transistor as the storage element is disclosed. Low operating voltages are used by including metal-oxide-semiconductor (MOS) varactors in the cell, enabling one to selectively induce avalanche injection for storing charge at selected bi...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A read only memory cell comprising a floating gate field effect transistor as the storage element is disclosed. Low operating voltages are used by including metal-oxide-semiconductor (MOS) varactors in the cell, enabling one to selectively induce avalanche injection for storing charge at selected bit sites. |
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