OHMIC CONTACTS FOR GALLIUM ARSENIDE SEMICONDUCTORS

An improved ohmic contact includes an alloy of a silver base material, a wetting agent and a doping agent. In a specific imbodiment the alloy includes silver, indium and zinc. The alloy does not include tin and is particularly advantageous for ohmically contacting gallium arsenide.

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Bibliographische Detailangaben
Hauptverfasser:	COX R,US, STRACK H,US
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CABLES CHEMISTRY CONDUCTORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INSULATORS METALLURGY SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	An improved ohmic contact includes an alloy of a silver base material, a wetting agent and a doping agent. In a specific imbodiment the alloy includes silver, indium and zinc. The alloy does not include tin and is particularly advantageous for ohmically contacting gallium arsenide.