TRANSISTORS AND PRODUCTION THEREOF

1313829 Semi-conductor devices KOGYO GIJUTSUIN 23 April 1970 [18 Sept 1969] 23619/72 Divided out of 1289650 Heading H1K The active base region 33-1 of a lateral transistor is formed by the lateral thermal diffusion of impurities from an ion implanted region. The impurities for the emitter region 31...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HAYASHI Y,JA, SEKIGAWA T,JA, TARUI Y,JA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	1313829 Semi-conductor devices KOGYO GIJUTSUIN 23 April 1970 [18 Sept 1969] 23619/72 Divided out of 1289650 Heading H1K The active base region 33-1 of a lateral transistor is formed by the lateral thermal diffusion of impurities from an ion implanted region. The impurities for the emitter region 31 are introduced by ion implantation or thermal diffusion through the same window in the masking layer as that used for the base impurity implantation. The emitter impurities are of an element, such as As, which diffuses more slowly than the base impurity, e.g. B, so that the active base width is determined by the relative extents to which the two impurities diffuse laterally. An ion implanted or diffused collector contact region 2-1 may also be provided.