PROCESS FOR PRODUCING MONOCRYSTALS FROM III-V COMPOUND MELTS WITH A BORON OXIDE RIM

PROCESS FOR PRODUCING MONOCRYSTALS FROM III-V COMPOUND MELTS WITH A BORON OXIDE RIM

1315346 Crystal pulling WACKER-CHEMITRONIC GES FUR ELEKTRONIKGRUNDSTOFFE mbH 7 July 1970 [7 July 1969] 32875/70 Heading BIS Single crystals are pulled from a melt of a III-V compound which has a component volatile at the melting point of the compound, by a process wherein the stoichiometry of the me...

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Bibliographische Detailangaben
Hauptverfasser: LANG W,DT, KREMSER F,DT, BIENERT K,DT
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:1315346 Crystal pulling WACKER-CHEMITRONIC GES FUR ELEKTRONIKGRUNDSTOFFE mbH 7 July 1970 [7 July 1969] 32875/70 Heading BIS Single crystals are pulled from a melt of a III-V compound which has a component volatile at the melting point of the compound, by a process wherein the stoichiometry of the melt is maintained by adjustment of the vapour pressure of the volatile component and wherein the edge of the surface of the melt, but not all the melt, is covered by molten boron oxide. A doping substance may be introduced via the vapour phase or into the melt. The examples disclose the preparation of gallium arsenide crystals, one example disclosing the doping with tellurium.