METHOD FOR MEASURING RESISTIVITY

METHOD FOR MEASURING RESISTIVITY

The method for measuring the bulk resistivity of an epitaxial semiconductor layer on a monocrystalline semiconductor base with a 4-point probe apparatus wherein the base has at least two high conductivity diffused regions, positioning two current probes directly over two separate diffused regions in...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ANDREW DUPNOCK, WILLIAM A. KEENAN, EDWARD F. GOREY
Format: Patent
Sprache:eng
Schlagworte:
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The method for measuring the bulk resistivity of an epitaxial semiconductor layer on a monocrystalline semiconductor base with a 4-point probe apparatus wherein the base has at least two high conductivity diffused regions, positioning two current probes directly over two separate diffused regions in contact with the surface of the epitaxial layer, placing two spaced voltage probes in contact with the epitaxial layer in a generally intermediate position relative to the current probes, inducing a current through the current probes and measuring the voltage drop between the voltage probes, calculating the bulk resistivity in accordance with the expression: