COMPOSITE STRUCTURE OF ZINC OXIDE DEPOSITED EPITAXIALLY ON SAPPHIRE

Composite heteroepitaxial structures of single crystal zinc oxide epitaxially deposited in a layer on a single crystal substrate of alpha-aluminum oxide (sapphire) and process for producing desired orientations of the zinc oxide single crystal layer corresponding to the orientation of the sapphire s...

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Bibliographische Detailangaben
Hauptverfasser: JESSE E. COKER, GUIDO GALLI
Format: Patent
Sprache:eng
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Zusammenfassung:Composite heteroepitaxial structures of single crystal zinc oxide epitaxially deposited in a layer on a single crystal substrate of alpha-aluminum oxide (sapphire) and process for producing desired orientations of the zinc oxide single crystal layer corresponding to the orientation of the sapphire substrate surface.