INTEGRATED CIRCUIT PROCESS UTILIZING ORIENTATION DEPENDENT SILICON ETCH

Orientation-dependent etching is employed in the fabrication of a monolithic semiconductor circuit network to provide electrical isolation and increased packing density, while minimizing collector series resistance and output capacitance. Collector contact to a transistor component is made by the di...

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Bibliographische Detailangaben
Hauptverfasser: BILLY M. MARTIN, LOYD H. CLEVENGER, BENJAMIN JOHNSTON SLOAN JR, ROGER S. DUNN
Format: Patent
Sprache:eng
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Zusammenfassung:Orientation-dependent etching is employed in the fabrication of a monolithic semiconductor circuit network to provide electrical isolation and increased packing density, while minimizing collector series resistance and output capacitance. Collector contact to a transistor component is made by the direct metallization of a buried low-resistivity substrate region exposed by the preferential etching operation.