METHOD OF MAKING OR MODIFYING A PN-JUNCTION BY ION IMPLANTATION

METHOD OF MAKING OR MODIFYING A PN-JUNCTION BY ION IMPLANTATION

Monolithic integrated circuits are made utilizing various ion implantation techniques for making diodes, transistors, resistors, capacitors, underpass connections, sub-collector junctions, etc., and for altering impurity profiles, gold doping, trimming resistance values, altering junctions depth, an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TSU-HSING YEH, PAUL A. SCHUMANN JR, MICHAEL C. DUFFY
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Monolithic integrated circuits are made utilizing various ion implantation techniques for making diodes, transistors, resistors, capacitors, underpass connections, sub-collector junctions, etc., and for altering impurity profiles, gold doping, trimming resistance values, altering junctions depth, and isolating regions.