THIN FILM RESISTOR CONTACT

An intermediate layer of molybdenum is interposed between the aluminum interconnect layer of a semiconductor device and a thin resistive film of nickel chromium, silicon-metal, or doped silicon to prevent a reaction between the resistive film and the aluminum layer, particularly during exposure to r...

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Bibliographische Detailangaben
1. Verfasser:	ROBERT K. WAITS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS RESISTORS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	An intermediate layer of molybdenum is interposed between the aluminum interconnect layer of a semiconductor device and a thin resistive film of nickel chromium, silicon-metal, or doped silicon to prevent a reaction between the resistive film and the aluminum layer, particularly during exposure to relatively high temperatures.