ENTRANCE-EXIT ATMOSPHERIC ISOLATION DEVICE

ENTRANCE-EXIT ATMOSPHERIC ISOLATION DEVICE

An atmospheric isolation device for separation of two atmospheres of a continuous semiconductor processing apparatus which includes a gas entry tube, a plurality of first gas restricting means leading to a first atmosphere, a plurality of second gas restricting means leading to a second atmosphere,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: RICHARD R. GARNACHE, DONALD M. KENNY
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:An atmospheric isolation device for separation of two atmospheres of a continuous semiconductor processing apparatus which includes a gas entry tube, a plurality of first gas restricting means leading to a first atmosphere, a plurality of second gas restricting means leading to a second atmosphere, and adjacent to each gas restricting means an expansion chamber for increasing back pressure and for destroying lift produced by the Bernouilli effect of the gas passing through the restricting means.