LIGHT-EMITTING DIODE WITH BUILT-IN DRIFT FIELD

LIGHT-EMITTING DIODE WITH BUILT-IN DRIFT FIELD

An injection electroluminescent semiconductor device having a light emitting conductivity-type layer with a PN-junction. wherein the distribution of effective majority impurity concentration decreases, or when a mixed crystal semiconductor material is used the component having a greater forbidden ba...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: JUNICHI UMEDA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An injection electroluminescent semiconductor device having a light emitting conductivity-type layer with a PN-junction. wherein the distribution of effective majority impurity concentration decreases, or when a mixed crystal semiconductor material is used the component having a greater forbidden band width is reduced, with the increase of the distance from the PN junction. This construction causes the formation of an internal electric field which keeps injected minority carriers away from the PN-junction. thereby increasing the penetration length of injected minority carriers and improving the quantum efficiency of light emission.