THIN FILM TRANSISTOR AND METHOD OF FABRICATION THEREOF

A thin film transistor utilizing an insulated gate structure is described wherein the semiconducting layer is formed of defect-nickel oxide having the general formula Ni(1-x)O, wherein x is within the range of 107 to 102. In a preferred embodiment, the insulating layer overlying the defect-nickel ox...

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Bibliographische Detailangaben
1. Verfasser:	ALFRED E. FEUERSANGER
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A thin film transistor utilizing an insulated gate structure is described wherein the semiconducting layer is formed of defect-nickel oxide having the general formula Ni(1-x)O, wherein x is within the range of 107 to 102. In a preferred embodiment, the insulating layer overlying the defect-nickel oxide semiconducting layer is formed of stoichiometric nickel oxide thereby reducing the number of steps required in fabrication. The thin film transistor is fabricated within a single system by utilizing reactive sputtering for the formation of the semiconducting and insulating layers. The sputtering takes place in a pure oxygen atmosphere in the absence of inert gases with the result that the characteristics of the deposited nickel oxide films can be varied by controlling the deposition rate during sputtering.