MEASUREMENT OF CARRIER CONCENTRATION OF SEMICONDUCTOR MATERIAL

MEASUREMENT OF CARRIER CONCENTRATION OF SEMICONDUCTOR MATERIAL

1306850 Optical testing INTERNATIONAL BUSINESS MACHINES CORP 3 Dec 1970 [15 Dec 1969] 57393/70 Heading G2J The impurity concentration of semi-conductive material is determined by measuring the angle of incidence of monochromatic infrared light (polarised in the plane of incidence) at which reflectiv...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: EDWARD E. GARDNER, PAUL A. SCHUMANN JR, WILLIAM A. KEENAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Beschreibung
Zusammenfassung:1306850 Optical testing INTERNATIONAL BUSINESS MACHINES CORP 3 Dec 1970 [15 Dec 1969] 57393/70 Heading G2J The impurity concentration of semi-conductive material is determined by measuring the angle of incidence of monochromatic infrared light (polarised in the plane of incidence) at which reflectivity is a minimum. When two such minimums are found, they may be distinguished by a further test (a) intensity of reflected beam or (b) measuring angular spread for a given magnitude of intensity or (c) measuring the intensity of the plane polarized light with the plane of polarization perpendicular to the plane of incidence.