METHOD OF PRODUCING INTEGRATED CIRCUITS AND THE LIKE

1,142,816. Semi-conductor devices. SIEMENS A.G. 10 May, 1966 [11 May, 1965], No. 20612/66. Heading H1K. A plurality of semi-conductor components or integrated circuit(s) is manufactured by producing doped regions for the component by masked diffusion of a semi-conductor plate, etching (before or after the diffusion) away from one surface unwanted regions to a predetermined depth, forming electrical interconnections and removing material from the opposite surface until the components are linked only by the connectors. In the embodiment, grooves 10-50 Á deep are etched in one face of a silicon slice between regions of localized conductivity types produced by masking techniques to constitute various semi-conductor devices; an oxide layer 4 is then produced overlying the devices and grooves and again utilizing masking and etching processes, gold layers 5 are vaporized to interconnect the various regions. A coating 6 of epoxy resin is applied and then the opposite surface is etched in an HCl, HF mixture to remove material until the gold interconnections become visible; the exposed surface is then also covered with epoxy resin 6. Exposed input and output leads 5 are thermo-compression bonded to leads 7. The insulating resin may be a silicone resin or polyester and may comprise additives such as calcium oxide, boron oxide or calcium sulphate for drying purposes and aluminium oxide or magnesium oxide for heat dissipation; it may be applied by a mould which may form part of the final casing. The process may be used to provide integrated circuit or a plurality of transistor or planar diodes. The semi-conductor may comprise silicon, germanium or a compound semi-conductor.