Processing semiconductor rods

The diameter of a molten zone 4, passed through a silicon rod 1 by movement along the rod of a surrounding induction coil 5, is automatically maintained constant by upward or downward movement of an upper clamp 20 which is responsive to change in the current in coil 5 caused by change in the diamete...

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Bibliographische Detailangaben
Hauptverfasser:	RUMMEL THEODOR, KELLER WOLFGANG, QUAST HANS-FRIEDRICH
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOSITIONS BASED THEREON CRYSTAL GROWTH ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL PROCESSES OF COMPOUNDING MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH THEIR PREPARATION OR CHEMICAL WORKING-UP UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WORKING-UP
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Beschreibung
Zusammenfassung:	The diameter of a molten zone 4, passed through a silicon rod 1 by movement along the rod of a surrounding induction coil 5, is automatically maintained constant by upward or downward movement of an upper clamp 20 which is responsive to change in the current in coil 5 caused by change in the diameter of the zone 4 (see Group XXXV). The diameter of the rod may be varied by deliberately varying the current fed to the coil.