INTEGRATED CIRCUIT STRUCTURES HAVING THROUGH-STACK THERMAL SINK FOR DUAL-SIDED DEVICES
Structures having a through-stack thermal sink for dual-sided devices are described. In an example, an integrated circuit structure includes a front side structure. The front side structure includes a device layer having a plurality of fin-based or nanowire-based transistors, and a plurality of meta...
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| creator | ODUNUGA, Samson LIFF, Shawna M JIANG, Lei DHAR, Apratim MARIOTTINI, Giorgio GREVE, Hannes ARRUDA, Brenden PULS, Conor P MONTANO, Gerardo WHITE, Aaron M |
| description | Structures having a through-stack thermal sink for dual-sided devices are described. In an example, an integrated circuit structure includes a front side structure. The front side structure includes a device layer having a plurality of fin-based or nanowire-based transistors, and a plurality of metallization layers above the plurality of fin-based or nanowire-based transistors. A backside structure is below the plurality of fin-based or nanowire-based transistors. A carrier wafer or substrate is bonded to the front side structure. A thermal conductive via extends from a location at a bottom of or below the plurality of fin-based or nanowire-based transistors to a location on or into the carrier wafer or substrate. |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | INTEGRATED CIRCUIT STRUCTURES HAVING THROUGH-STACK THERMAL SINK FOR DUAL-SIDED DEVICES |
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