INTEGRATED CIRCUIT STRUCTURES HAVING THROUGH-STACK THERMAL SINK FOR DUAL-SIDED DEVICES

INTEGRATED CIRCUIT STRUCTURES HAVING THROUGH-STACK THERMAL SINK FOR DUAL-SIDED DEVICES

Structures having a through-stack thermal sink for dual-sided devices are described. In an example, an integrated circuit structure includes a front side structure. The front side structure includes a device layer having a plurality of fin-based or nanowire-based transistors, and a plurality of meta...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ODUNUGA, Samson, LIFF, Shawna M, JIANG, Lei, DHAR, Apratim, MARIOTTINI, Giorgio, GREVE, Hannes, ARRUDA, Brenden, PULS, Conor P, MONTANO, Gerardo, WHITE, Aaron M
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Structures having a through-stack thermal sink for dual-sided devices are described. In an example, an integrated circuit structure includes a front side structure. The front side structure includes a device layer having a plurality of fin-based or nanowire-based transistors, and a plurality of metallization layers above the plurality of fin-based or nanowire-based transistors. A backside structure is below the plurality of fin-based or nanowire-based transistors. A carrier wafer or substrate is bonded to the front side structure. A thermal conductive via extends from a location at a bottom of or below the plurality of fin-based or nanowire-based transistors to a location on or into the carrier wafer or substrate.