SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device may include a gate structure including insulating layers and conductive layers that are alternately stacked, a real channel structure extending through the gate structure, a slit structure extending in a first direction along the sidewall of the gate structure, a contact structure extending through the gate structure and that is electrically connected to at least one conductive layer, among the conductive layers, and a pair of first supports extending in an arc form along the sidewall of the contact structure and that includes concave and convex parts on sidewalls of the first supports.