SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR DEVICE
A semiconductor device includes an insulating layer, a first semiconductor layer over the insulating layer, a diffusion break structure between a first active region and a second active region and including a first insulating pattern over the insulating layer and an opening over the first insulating...
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creator | YU, Hong KOZARSKY, Eric Scott GU, Man TOKRANOV, Anton MULFINGER, George |
description | A semiconductor device includes an insulating layer, a first semiconductor layer over the insulating layer, a diffusion break structure between a first active region and a second active region and including a first insulating pattern over the insulating layer and an opening over the first insulating pattern, and a conductive gate material over the opening. |
format | Patent |
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title | SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR DEVICE |
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