SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR DEVICE

A semiconductor device includes an insulating layer, a first semiconductor layer over the insulating layer, a diffusion break structure between a first active region and a second active region and including a first insulating pattern over the insulating layer and an opening over the first insulating...

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Bibliographische Detailangaben
Hauptverfasser: YU, Hong, KOZARSKY, Eric Scott, GU, Man, TOKRANOV, Anton, MULFINGER, George
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device includes an insulating layer, a first semiconductor layer over the insulating layer, a diffusion break structure between a first active region and a second active region and including a first insulating pattern over the insulating layer and an opening over the first insulating pattern, and a conductive gate material over the opening.