SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES

SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES

Disclosed are semiconductor devices and fabrication methods. A semiconductor device includes a first gate structure including a first set of channels disposed along a first direction through a first gate metal, and a first set of gate dielectrics disposed between the first set of channels and the fi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NARASIMHA, Shreesh, SUN, Yan, FENG, Peijie
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed are semiconductor devices and fabrication methods. A semiconductor device includes a first gate structure including a first set of channels disposed along a first direction through a first gate metal, and a first set of gate dielectrics disposed between the first set of channels and the first gate metal. The first set of gate dielectrics each have a first thickness. The semiconductor device further includes a second gate structure including a second set of channels disposed along the first direction through a second gate metal, and a second set of gate dielectrics disposed between the second set of channels and the second gate metal. The second set of gate dielectrics each have a second thickness. The second thickness is greater than the first thickness and the second set of channels is less in number than the first set of channels.