NON-VOLATILE MEMORY AND PROGRAMMING METHOD THEREOF

NON-VOLATILE MEMORY AND PROGRAMMING METHOD THEREOF

A non-volatile memory and a programming method thereof are provided. The programming method includes: performing a reading operation on a plurality of first memory cells of an Nth word line, and determining whether an equivalent threshold voltage is greater than a preset threshold value to generate...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chen, Kuan-Fu, Lee, Ya-Jui
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A non-volatile memory and a programming method thereof are provided. The programming method includes: performing a reading operation on a plurality of first memory cells of an Nth word line, and determining whether an equivalent threshold voltage is greater than a preset threshold value to generate a determination result, where N is a positive integer greater than 0; and in response to performing a programming operation on a plurality of second memory cells of an N+1th word line, deciding whether to adjust at least one selected programming verification voltage of a plurality of programming verification voltages by an offset value according to the determination result.