NON -VOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF

The present disclosure relates to methods of operating non-volatile memory devices. An example read operation method of a non-volatile memory device includes applying a first read voltage, generated from a voltage generator, to a selected wordline, performing a first sensing node develop operation associated with the first read voltage, and performing a first sensing operation associated with the first read voltage. While the first sensing node develop operation is performed, the voltage generator generates a second read voltage based on the selected wordline being disconnected from the voltage generator and thereby being floated.