Integrated Pressure Sensor for Process Chamber Assemblies

Methods and apparatus provide in-situ pressure sensors for apparatus used in semiconductor manufacturing processes. In some embodiments, the apparatus may comprise a showerhead body, a first gas channel of the showerhead body, a second gas channel of the showerhead body, one or more first gas pressu...

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Bibliographische Detailangaben
Hauptverfasser:	GADGIL, Shantanu Rajiv, WANG, Shannon, CHO, Tom K, YANG, Yao-Hung, LIAO, Chien-Min, CHANG, Chih-Yang
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE METALLURGY PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING TESTING STATIC OR DYNAMIC BALANCE OF MACHINES ORSTRUCTURES TESTING STRUCTURES OR APPARATUS NOT OTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	Methods and apparatus provide in-situ pressure sensors for apparatus used in semiconductor manufacturing processes. In some embodiments, the apparatus may comprise a showerhead body, a first gas channel of the showerhead body, a second gas channel of the showerhead body, one or more first gas pressure sensors positioned on a surface of the first gas channel, and one or more second gas pressure sensors positioned on a surface of the second gas channel. The apparatus may be formed by additive manufacturing including the pressure sensors and electrical connections to the pressure sensors. In some embodiments, a controller may be utilized to control semiconductor processes based on the pressure readings from the in-situ pressure sensors.