THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

A memory device includes a first stack and a second stack, a barrier structure extending vertically through the first stack and laterally separating the first stack from the second stack, a through array contact structure extending vertically through the first stack, and a slit structure extending through the second stack along a first lateral direction perpendicular to a vertical direction and including a conductive structure. The first stack includes first dielectric layers and second dielectric layers arranged alternately in the vertical direction. The second stack includes conductor layers and third dielectric layers arranged alternately in the vertical direction. The barrier structure includes two parallel first sub-barrier structures.