SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING MOS SWITCH

Provided is a semiconductor integrated circuit including a metal-oxide-semiconductor (MOS) switch, in which the MOS switch includes a first main MOS transistor having a first polarity, a first dummy MOS transistor having the first polarity and having opposed ends each connected to a first end of the first main MOS transistor, and a switch control circuit that supplies a first voltage according to a control signal to a gate of the first main MOS transistor, supplies a second voltage opposite in phase to the first voltage to a gate of the first dummy MOS transistor, and is configured to be capable of adjusting a slew rate of each of the first voltage and the second voltage.