SPARK GAPS WITH HIGH CURRENT CAPABILITY FOR ELECTRICAL OVERSTRESS DETECTION AND PROTECTION

Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a spark gap device includes first and second conductive layers formed over a substrate, where the first and second conductive layers are electrica...

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Hauptverfasser: McGuinness, Patrick Martin, Jolondcovschi, Stanislav, Lynch, Michael P, Maher, Paul Joseph, Twohig, Michael James, Kubik, Jan, Bradley, Shaun, Schmitt, Jochen, Linehan, Andrew Christopher, Coyne, Edward John, Wallrabenstein, John Ross, Cosgrave, Gavin Patrick, McMahon, Anne M, Cleary, John Anthony, Fitzgerald, Padraig L, McSherry, Mary, Burke, Cillian, Clarke, David J, Heffernan, Stephen Denis, Aherne, David, O'Donnell, Alan J
Format: Patent
Sprache:eng
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Zusammenfassung:Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a spark gap device includes first and second conductive layers formed over a substrate, where the first and second conductive layers are electrically connected to first and second voltage nodes, respectively. The first conductive layer includes a plurality of arcing tips configured to form arcing electrode pairs with the second conductive layer to form an arc discharge in response to an EOS voltage between the first and second voltage nodes. The spark gap device further includes a series ballast resistor electrically connected between the arcing tips and the first voltage node, where the ballast resistor in formed in a metallization layer over the substrate and a resistance of the series ballast resistor is substantially higher than a resistance of the second conductive layer.