AlGaN/GaN POWER HEMT DEVICE AND METHOD FOR MANUFACTURING THE SAME

The present invention provides an AlGaN/GaN power HEMT device and a preparation method therefor. The device comprises: an n-type GaN substrate, a first p-type GaN layer, an AlGaN layer, a hole-injection-type PN junction layer and a gate structure, wherein the gate structure penetrates the hole-injection-type PN junction layer, the AlGaN layer and the first p-type GaN layer and stops in the n-type GaN substrate, and comprises a gate metal aluminum layer and a gate silicon dioxide layer; and the hole-injection-type PN junction layer comprises a second p-type GaN layer and a second n-type GaN layer, which are distributed in the horizontal direction, and the second n-type GaN layer is located on the side close to the gate structure.