POWER SEMICONDUCTOR MODULE HAVING A METALLIC CLIP WITH ULTRASONICALLY WELDED CONTACT REGIONS AND METHOD OF PRODUCING THE POWER SEMICONDUCTOR MODULE

A power semiconductor module includes: a first substrate; a first power semiconductor die attached to the first substrate; and a first metallic clip having a plurality of first contact regions ultrasonically welded to either a first metallic region of the first substrate or a first metallic region o...

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Bibliographische Detailangaben
Hauptverfasser: Broll, Marian Sebastian, Obermeier, Daniel, Biermann, Florian Alexander
Format: Patent
Sprache:eng
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